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? semiconductor components industries, llc, 2016 december, 2017 ? rev. 0 1 publication order number: nxh160t120l2q2/d NXH160T120L2Q2F2SG split t-type npc power module 1200 v, 160 a igbt, 600 v, 100 a igbt the NXH160T120L2Q2F2SG is a power module containing a split t? type neutral point clamped three?level inverter, consisting of two 160 a / 1200 v half bridge igbts with inverse diodes, two neutral point 120 a / 600 v rectifiers, two 100 a / 600 v neutral point igbts with inverse diodes, two half bridge 60 a / 1200 v rectifiers and a negative temperature coefficient thermistor (ntc). features ? split t?type neutral point clamped three?level inverter module ? 1200 v igbt specifications: v ce(sat) = 2.15 v, e sw = 4300 j ? 600 v igbt specifications: v ce(sat) = 1.47 v, e sw = 2560 j ? baseplate ? solderable pins ? thermistor typical applications ? solar inverters ? uninterruptible power supplies figure 1. NXH160T120L2Q2F2SG schematic diagram 23?26 17?22 36 37 38?43 1?6 44?49 7?10 50 51 34 33 52 35 56 55 11?16 27?32 t1 d1 t4 d4 t2 d2 d3 t3 d5 d6 d7 d8 53 54 ntc half bridge igbt half bridge igbt neutral point igbt neutral point igbt half bridge freewheel diode half bridge inverse diode half bridge inverse diode half bridge freewheel diode neutral point freewheel diode neutral point freewheel diode neutral point inverse diode neutral point inverse diode www. onsemi.com marking diagram pin connections see detailed ordering and shipping information on page 5 o f this data sheet. ordering information q2pack case 180ak NXH160T120L2Q2F2SG atyyww NXH160T120L2Q2F2SG = device code yyww = year and work week code a = assembly site code t = test site code g = pb?free package
NXH160T120L2Q2F2SG www. onsemi.com 2 table 1. absolute maximum ratings (note 1) t j = 25 c unless otherwise noted rating symbol value unit half bridge igbt collector?emitter voltage v ces 1200 v gate?emitter voltage v ge 20 v continuous collector current @ t h = 80 c ( t j = 175 c) i c 181 a pulsed collector current (t j = 175 c) i cpulse 543 a maximum power dissipation @ t h = 80 c (t j = 175 c) p tot 500 w short circuit withstand time @ v ge = 15 v, v ce = 600 v, t j 150 c t sc 5 s minimum operating junction temperature t jmin ?40 c maximum operating junction temperature t jmax 150 c neutral point igbt collector?emitter voltage v ces 600 v gate?emitter voltage v ge 20 v continuous collector current @ t h = 80 c (t j = 175 c) i c 116 a pulsed collector current (t j = 175 c) i cpulse 348 a maximum power dissipation @ t h = 80 c (t j = 175 c) p tot 232 w short circuit withstand time @ v ge = 15 v, v ce = 400 v, t j 150 c t sc 5 s minimum operating junction temperature t jmin ?40 c maximum operating junction temperature t jmax 150 c half bridge freewheel diode peak repetitive reverse voltage v rrm 1200 v continuous forward current @ t h = 80 c (t j = 175 c) i f 56 a repetitive peak forward current (t j = 175 c, t p limited by t jmax ) i frm 150 a maximum power dissipation @ t h = 80 c (t j = 175 c) p tot 142 w minimum operating junction temperature t jmin ?40 c maximum operating junction temperature t jmax 150 c half bridge inverse diode peak repetitive reverse voltage v rrm 1200 v continuous forward current @ t h = 80 c (t j = 175 c) i f 19 a repetitive peak forward current (t j = 175 c, t p limited by t jmax ) i frm 50 a maximum power dissipation @ t h = 80 c (t j = 175 c) p tot 63 w minimum operating junction temperature t jmin ?40 c maximum operating junction temperature t jmax 150 c neutral point freewheel diode peak repetitive reverse voltage v rrm 600 v continuous forward current @ t h = 80 c (t j = 175 c) i f 132 a repetitive peak forward current (t j = 175 c, t p limited by t jmax ) i frm 300 a maximum power dissipation @ t h = 80 c (t j = 175 c) p tot 198 w minimum operating junction temperature t jmin ?40 c maximum operating junction temperature t jmax 150 c neutral point inverse diode peak repetitive reverse voltage v rrm 600 v continuous forward current @ t h = 80 c (t j = 175 c) i f 38 a repetitive peak forward current (t j = 175 c, t p limited by t jmax ) i frm 110 a maximum power dissipation @ t h = 80 c (t j = 175 c) p tot 79 w minimum operating junction temperature t jmin ?40 c
NXH160T120L2Q2F2SG www. onsemi.com 3 table 1. absolute maximum ratings (note 1) t j = 25 c unless otherwise noted rating unit value symbol neutral point inverse diode maximum operating junction temperature t jmax 150 c thermal properties storage temperature range t stg ?40 to 125 c insulation properties isolation test voltage, t = 1 sec, 60hz v is 3000 v rms creepage distance 12.7 mm stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. refer to electrical characteristics, recommended operating ranges and/or application information for safe operating parameters. table 2. recommended operating ranges rating symbol min max unit module operating junction temperature t j ?40 (t jmax ?25) c functional operation above the stresses listed in the recommended operating ranges is not implied. extended exposure to stresse s beyond the recommended operating ranges limits may affect device reliability. table 3. electrical characteristics t j = 25 c unless otherwise noted parameter test conditions symbol min typ max unit half bridge igbt characteristics collector?emitter cutoff current v ge = 0 v, v ce = 1200 v i ces ? ? 500 a collector?emitter saturation voltage v ge = 15 v, i c = 160 a, t j = 25 c v ce(sat ) ? 2.15 2.7 v v ge = 15 v, i c = 160 a, t j = 150 c ? 2.08 ? gate?emitter threshold voltage v ge = v ce , i c = 6 ma v ge(th) ? 5.53 6.4 v gate leakage current v ge = 20 v, v ce = 0 v i ges ? ? 500 na turn?on delay time t j = 25 c v ce = 350 v, i c = 100 a v ge = 15 v, r g = 4 t d(on) ? 105 ? ns rise time t r ? 50 ? turn?off delay time t d(off) ? 270 ? fall time t f ? 55 ? turn?on switching loss per pulse e on ? 1700 ? j turn off switching loss per pulse e off ? 2600 ? turn?on delay time t j = 125 c v ce = 350 v, i c = 100 a v ge = 15 v, r g = 4 t d(on) ? 95 ? ns rise time t r ? 55 ? turn?off delay time t d(off) ? 285 ? fall time t f ? 150 ? turn?on switching loss per pulse e on ? 2300 ? j turn off switching loss per pulse e off ? 4600 ? input capacitance v ce = 25 v. v ge = 0 v. f = 10 khz c ies ? 38800 ? pf output capacitance c oes ? 800 ? reverse transfer capacitance c res ? 680 ? total gate charge v ce = 600 v, i c = 160 a, v ge = 15 v q g ? 1600 ? nc thermal resistance ? chip?to?heatsink thermal grease, thickness < 100 m, = 0.84 w/mk r thjh ? 0.19 ? c/w
NXH160T120L2Q2F2SG www. onsemi.com 4 table 3. electrical characteristics t j = 25 c unless otherwise noted parameter unit max typ min symbol test conditions neutral point freewheel diode characteristics diode reverse leakage current v r = 600 v i r ? ? 100 a diode forward voltage i f = 120 a, t j = 25 c v f ? 1.24 1.5 v i f = 120 a, t j = 150 c ? 1.20 ? reverse recovery time t j = 25 c v ce = 350 v, i c = 100 a v ge = 15 v, r g = 4 t rr ? 50 ? ns reverse recovery charge q rr ? 1700 ? nc peak reverse recovery current i rrm ? 59 ? a peak rate of fall of recovery current di/dt ? 2500 ? a/ s reverse recovery energy e rr ? 380 ? j reverse recovery time t j = 125 c v ce = 350 v, i c = 100 a v ge = 15 v, r g = 4 t rr ? 77 ? ns reverse recovery charge q rr ? 3600 ? nc peak reverse recovery current i rrm ? 77 ? a peak rate of fall of recovery current di/dt ? 1900 ? a/ s reverse recovery energy e rr ? 780 ? j thermal resistance ? chip?to?heatsink thermal grease, thickness < 100 m, = 0.84 w/mk r thjh ? 0.48 ? c/w neutral point igbt characteristics collector?emitter cutoff current v ge = 0 v, v ce = 600 v i ces ? ? 300 a collector?emitter saturation voltage v ge = 15 v, i c = 100 a, t j = 25 c v ce(sat ) ? 1.47 1.8 v v ge = 15 v, i c = 100 a, t j = 150 c ? 1.50 ? gate?emitter threshold voltage v ge = v ce , i c = 1.2 ma v ge(th) ? 5.30 6.4 v gate leakage current v ge = 20 v, v ce = 0 v i ges ? ? 300 na turn?on delay time t j = 25 c v ce = 350 v, i c = 100 a v ge = 15 v, r g = 4 t d(on) ? 50 ? ns rise time t r ? 35 ? turn?off delay time t d(off) ? 135 ? fall time t f ? 40 ? turn?on switching loss per pulse e on ? 870 ? j turn off switching loss per pulse e off ? 1690 ? turn?on delay time t j = 125 c v ce = 350 v, i c = 100 a v ge = 15 v, r g = 4 t d(on) ? 50 ? ns rise time t r ? 37 ? turn?off delay time t d(off) ? 145 ? fall time t f ? 65 ? turn?on switching loss per pulse e on ? 1300 ? j turn off switching loss per pulse e off ? 2500 ? input capacitance v ce = 25 v, v ge = 0 v, f = 10 khz c ies ? 18800 ? pf output capacitance c oes ? 560 ? reverse transfer capacitance c res ? 500 ? total gate charge v ce = 480 v, i c = 80 a, v ge = 15 v q g ? 790 ? nc thermal resistance ? chip?to?heatsink thermal grease, thickness < 100 m, = 0.84 w/mk r thjh ? 0.41 ? c/w
NXH160T120L2Q2F2SG www. onsemi.com 5 table 3. electrical characteristics t j = 25 c unless otherwise noted parameter unit max typ min symbol test conditions half bridge freewheel diode characteristics diode reverse leakage current v r = 1200 v i r ? ? 100 a diode forward voltage i f = 60 a, t j = 25 c v f ? 2.63 3.3 v i f = 60 a, t j = 150 c ? 2.12 ? reverse recovery time t j = 25 c v ce = 350 v, i c = 100 a v ge = 15 v, r g = 4 t rr ? 320 ? ns reverse recovery charge q rr ? 3700 ? nc peak reverse recovery current i rrm ? 68 ? a peak rate of fall of recovery current di/dt ? 3000 ? a/ s reverse recovery energy e rr ? 1150 ? j reverse recovery time t j = 125 c v ce = 350 v, i c = 100 a v ge = 15 v, r g = 4 t rr ? 520 ? ns reverse recovery charge q rr ? 9000 ? nc peak reverse recovery current i rrm ? 102 ? a peak rate of fall of recovery current di/dt ? 2600 ? a/ s reverse recovery energy e rr ? 2750 ? j thermal resistance ? chip?to?heatsink thermal grease, thickness < 100 m, = 0.84 w/mk r thjh ? 0.67 ? c/w half bridge inverse diode characteristics diode forward voltage i f = 7 a, t j = 25 c v f ? 1.92 2.80 v i f = 7 a, t j = 150 c ? 1.37 ? thermal resistance ? chip?to?heatsink thermal grease, thickness < 100 m, = 0.84 w/mk r thjh ? 1.52 ? c/w neutral point inverse diode characteristics diode forward voltage i f = 30 a, t j = 25 c v f ? 2.24 2.75 v i f = 30 a, t j = 150 c ? 1.60 ? thermal resistance ? chip?to?heatsink thermal grease, thickness 100 m, = 0.84 w/mk r thjh ? 1.21 ? c/w thermistor characteristics nominal resistance r 25 ? 22 ? k nominal resistance t = 100 c r 100 ? 1486 ? deviation of r25 r/r ?5 ? 5 % power dissipation p d ? 200 ? mw power dissipation constant ? 2 ? mw/k b?value b(25/50), tolerance 3% ? 3950 ? k b?value b(25/100), tolerance 3% ? 3998 ? k ordering information device marking package shipping NXH160T120L2Q2F2SG q2pack NXH160T120L2Q2F2SG q2pack ? case 180ak (pb?free and halide?free) 12 units / blister tray
NXH160T120L2Q2F2SG www. onsemi.com 6 typical characteristics ? half bridge igbt and neutral point diode figure 1. igbt typical output characteristics figure 2. igbt typical output characteristics v ce , collector?emitter voltage (v) v ce , collector?emitter voltage (v) 5 4 3 2 1 0 0 50 100 150 200 250 350 5 4 3 2 1 0 0 50 100 150 200 250 350 figure 3. igbt typical transfer characteristics figure 4. diode forward characteristic v ge , gate?emitter voltage (v) v f , forward voltage (v) 10 8 6 412 2 0 0 30 60 120 150 210 240 300 2.5 2.0 1.5 1.0 0.5 0 0 50 100 150 200 figure 5. typical turn on loss vs. ic figure 6. typical turn off loss vs. ic i c , collector current (a) i c , collector current (a) 150 100 50 0 0 500 1000 1500 2000 3000 3500 4000 200 100 50 0 0 2000 3000 4000 5000 7000 8000 i c , collector current (a) i c , collector current (a) i c , collector current (a) i f , forward current (a) e on , turn on loss ( j) e off , turn off loss ( j) t j = 25 c 17 v to 11 v 10 v 9 v 8 v 7 v t j = 150 c 17 v to 11 v 10 v 9 v 8 v 7 v t j = 25 c t j = 150 c 90 180 270 t j = 25 c t j = 150 c 25 c 125 c 200 2500 25 c 125 c 150 v ge = 15 v v ce = 350 v r g = 4 300 300 1000 6000 v ge = 15 v v ce = 350 v r g = 4
NXH160T120L2Q2F2SG www. onsemi.com 7 typical characteristics ? half bridge igbt and neutral point diode figure 7. typical turn on loss vs. ic figure 8. typical turn off loss vs. ic i c , collector current (a) i c , collector current (a) 200 100 50 0 0 50 100 200 250 300 400 150 100 50 0 0 40 60 80 100 120 140 figure 9. typical reverse recovery time vs. ic figure 10. typical reverse recovery charge vs. ic i c , collector current (a) i c , collector current (a) 100 0 0 10 30 40 50 60 90 100 150 50 0 0 500 1000 1500 2000 2500 5000 figure 11. typical reverse recovery peak current vs. ic figure 12. typical diode current slope vs. ic i c , collector current (a) i c , collector current (a) 150 100 50 0 0 20 30 50 60 80 100 150 100 50 0 0 500 1000 2000 2500 3000 4000 time (ns) time (ns) t rr , reverse recovery time (ns) i rrm , reverse recovery current (a) di/dt, diode current slope (a/ s) 150 200 25 c 125 c 50 150 200 25 c 125 c 100 200 q rr , reverse recovery charge (nc) v ge = 15 v v ce = 350 v r g = 4 v ge = 15 v v ce = 350 v r g = 4 v ge = 15 v v ce = 350 v r g = 4 200 10 40 70 90 v ge = 15 v v ce = 350 v r g = 4 200 150 350 v ge = 15 v v ce = 350 v r g = 4 t d(off) @ 125 c t d(off) @ 25 c t f @ 125 c t f @ 25 c t d(on) @ 125 c t d(on) @ 25 c t r @ 125 c t r @ 25 c 20 70 80 3000 3500 4000 4500 1500 3500 25 c 125 c 25 c 125 c 20 v ge = 15 v v ce = 350 v r g = 4
NXH160T120L2Q2F2SG www. onsemi.com 8 typical characteristics ? half bridge igbt and neutral point diode figure 13. typical reverse recovery energy vs. ic figure 14. gate voltage vs. gate charge i c , collector current (a) q g , gate charge (nc) 100 50 0 0 200 400 600 1000 1200 1000 500 0 0 2 4 8 10 12 14 16 figure 15. igbt transient thermal impedance figure 16. diode transient thermal impedance e rr , reverse recovery energy ( j) v ge , gate voltage (v) 25 c 125 c v ge = 15 v v ce = 350 v r g = 4 v ce = 600 v i c = 160 a 150 200 800 1500 2000 on?pulse width (s) 1.0e?06 r(t), square?wave peak ( c/w) 1.0e?05 1.0e?04 1.0e?03 1.0e?02 1.0e?01 1.0e+00 1.0e+01 0.00001 0.001 0.01 0.1 1 10 single pulse dut = 50% 30% 10% 5% 1% 2% on?pulse width (s) 1.0e?06 1.0e?05 1.0e?04 1.0e?03 1.0e?02 1.0e?01 1.0e+00 1.0e+01 r(t), square?wave peak ( c/w) 0.00001 0.001 0.01 0.1 1 10 single pulse dut = 50% 30% 10% 5% 1% 2% 0.0001 0.0001 6
NXH160T120L2Q2F2SG www. onsemi.com 9 typical characteristics ? neutral point igbt and half bridge diode figure 17. igbt typical output characteristics figure 18. igbt typical output characteristics v ce , collector?emitter voltage (v) v ce , collector?emitter voltage (v) 5 4 3 2 1 0 0 50 100 150 200 250 300 5 4 3 2 1 0 0 30 60 90 120 150 figure 19. igbt typical transfer characteristics figure 20. diode forward characteristic v ge , gate?emitter voltage (v) v f , forward voltage (v) 10 8 6 412 2 0 0 30 60 120 150 6 5 4 2 1 0 0 50 100 150 200 figure 21. typical turn on loss vs. ic figure 22. typical turn off loss vs. ic i c , collector current (a) i c , collector current (a) 150 100 50 0 0 200 400 800 1000 1400 1800 2000 200 100 50 0 0 500 1500 2500 3000 4000 5000 i c , collector current (a) i c , collector current (a) i c , collector current (a) i f , forward current (a) e on , turn on loss ( j) e off , turn off loss ( j) t j = 25 c 17 v to 12 v 10 v 9 v 8 v 7 v t j = 150 c 17 v to 10 v 9 v 8 v 7 v t j = 25 c t j = 150 c 90 t j = 25 c t j = 150 c 25 c 125 c 200 1200 25 c 125 c 150 v ge = 15 v v ce = 350 v r g = 4 11 v 3 600 1600 v ge = 15 v v ce = 350 v r g = 4 1000 2000 3500 4500
NXH160T120L2Q2F2SG www. onsemi.com 10 typical characteristics ? neutral point igbt and half bridge diode figure 23. typical turn on loss vs. ic figure 24. typical switching times vs. ic i c , collector current (a) i c , collector current (a) 200 100 50 0 0 20 40 60 80 100 180 150 100 50 0 0 10 20 30 50 60 70 figure 25. typical reverse recovery time vs. ic figure 26. typical reverse recovery charge vs. ic i c , collector current (a) i c , collector current (a) 150 100 50 0 0 100 200 300 400 600 700 800 150 50 0 0 2000 4000 6000 10,000 12,000 14,000 figure 27. typical reverse recovery peak current vs. ic figure 28. typical diode current slope vs. ic i c , collector current (a) i c , collector current (a) 150 100 50 0 0 120 140 150 100 50 0 1000 1500 2000 2500 3000 3500 4000 time (ns) time (ns) t rr , reverse recovery time (ns) i rrm , reverse recovery current (a) di/dt, diode current slope (a/ s) 150 200 25 c 125 c 200 25 c 125 c 100 200 q rr , reverse recovery charge (nc) v ge = 15 v v ce = 350 v r g = 4 v ge = 15 v v ce = 350 v r g = 4 v ge = 15 v v ce = 350 v r g = 4 200 20 40 60 80 100 v ge = 15 v v ce = 350 v r g = 4 200 t d(off) @ 125 c t d(off) @ 25 c t f @ 125 c t f @ 25 c 120 140 160 v ge = 15 v v ce = 350 v r g = 4 t d(on) @ 125 c t d(on) @ 25 c t r @ 125 c t r @ 25 c 40 8000 500 25 c 125 c v ge = 15 v v ce = 350 v r g = 4 25 c 125 c
NXH160T120L2Q2F2SG www. onsemi.com 11 typical characteristics ? neutral point igbt and half bridge diode figure 29. typical reverse recovery energy vs. ic figure 30. gate voltage vs. gate charge i c , collector current (a) q g , gate charge (nc) 150 100 50 0 0 500 1000 1500 2000 2500 4000 4500 600 400 200 0 0 2 4 6 8 10 14 16 figure 31. igbt transient thermal impedance figure 32. diode transient thermal impedance e rr , reverse recovery energy ( j) v ge , gate voltage (v) 25 c 125 c v ge = 15 v v ce = 350 v r g = 4 v ce = 480 v i c = 80 a 200 3000 3500 800 1000 on?pulse width (s) 1.0e?06 r(t), square?wave peak ( c/w) 1.0e?05 1.0e?04 1.0e?03 1.0e?02 1.0e?01 1.0e+00 1.0e+01 0.00001 0.001 0.01 0.1 1 10 single pulse dut = 50% 30% 10% 5% 1% 2% on?pulse width (s) 1.0e?06 1.0e?05 1.0e?04 1.0e?03 1.0e?02 1.0e?01 1.0e+00 1.0e+01 r(t), square?wave peak ( c/w) 0.001 0.01 0.1 1 10 single pulse dut = 50% 30% 10% 5% 1% 2% 0.0001 0.0001 12
NXH160T120L2Q2F2SG www. onsemi.com 12 typical characteristics ? half bridge igbt protection diode figure 33. diode forward characteristic v f , forward voltage (v) 4 3 1 0 0 20 40 80 100 figure 34. diode transient thermal impedance i f , forward current (a) 25 c 150 c 6 60 on?pulse width (s) 1.0e?06 1.0e?05 1.0e?04 1.0e?03 1.0e?02 1.0e?01 1.0e+00 1.0e+01 r(t), square?wave peak ( c/w) 0.001 0.01 0.1 1 10 single pulse dut = 50% 30% 10% 5% 1% 2% 0.0001 25
NXH160T120L2Q2F2SG www. onsemi.com 13 typical characteristics ? neutral point igbt protection diode figure 35. diode forward characteristic v f , forward voltage (v) 3 2 1 0 0 10 20 30 40 50 60 100 i f , forward current (a) 4 25 c 150 c 70 80 90 figure 36. diode transient thermal impedance on?pulse width (s) 1.0e?06 r(t), square?wave peak ( c/w) 1.0e?05 1.0e?04 1.0e?03 1.0e?02 1.0e?01 1.0e+00 1.0e+01 0.0001 0.001 0.01 0.1 1 10 single pulse dut = 50% 30% 10% 5% 1% 2% typical characteristics ? thermistor figure 37. thermistor characteristics temperature ( c) 125 25 0 4k 8k 12k 20k 24k resistance ( ) 16k 45 65 85 105
NXH160T120L2Q2F2SG www. onsemi.com 14 package dimensions pim56, 93x47 (solder pin) case 180ak issue b on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 nxh160t120l2q2/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?

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